主要論文

1. Lin, T.T., Ying, L., and Hirayama, H.:
   "Threshold current density reduction by utilizing high-Al-composition barriers in 3.7 THz GaAs/AlGaAs quantum cascade lasers"
   Appl. Phys. Express, Vol. 5, 012101 (2011).
2. Terashima, W. and Hirayama, H.:
   "Development of terahertz quantum cascade laser based on III-nitride semiconductors"
   The Review of Laser Engineering, Vol. 39, No. 10, pp. 769-774 (2011).
3. Terashima, W. and Hirayama, H.:
   "Molecular beam epitaxy growth of GaN/AlGaN quantum cascade structure using droplets elimination by thermal annealing technique"
   Phys. Status Solidi A 208, No. 5, pp. 1187-1190 (2011).
4. Terashima, W. and Hirayama, H.:
   "Spontaneous emission from GaN/AlGaN terahertz quantum cascade laser grown on GaN substrate"
   Phys. Status Solidi C, Vol. 8, pp. 2302-2304 (2011).
5. Mino, T., Hirayama, H., Takano, T., Tsubaki, K. and Sugiyama, M.:
   "Characteristics of epitaxial lateral overgrowth AlN template on (111)Si substrates for AlGaN deep-UV LEDs fabricated on different direction stripe patterns"
   Phys. Status Solidi, in press.
6. Fujikawa, S., Hirayama, H. and Maeda, N.:
   "High-Efficiency AlGaN Deep-UV LEDs fabricated on a- and m-axis oriented c-plane sapphire substrates"
   Phys. Status Solidi, in press.
7. Mino, T., Hirayama, H., Takano, T., Tsubaki, K. and Sugiyama, M.:
   "Realization of 256-278 nm AlGaN-based Deep-Ultraviolet Light-Emitting Diodes on Si Substrates Using Epitaxial Lateral Overgrowth AlN Templates"
   Applied Physics Express 4, 092104 (2011).
8. Fujikawa, S. and Hirayama, H.:
   "284-300 nm quaternary InAlGaN-based deep-ultraviolet light-emitting diodes on Si(111) substrates"
   Applied Physics Express 4, 061002 (2011).
9. Terashima, W. and Hirayama, H.:
   "The Utility of Droplet Elimination by Thermal Annealing Technique for Fabrication of GaN/AlGaN Terahertz Quantum Cascade Structure by Radio Frequency Molecular Beam Epitaxy"
   Appl. Phys. Express, Vol. 3, No. 12, 125501-1-3 (2010).
10. Ying, L., Horiuchi, N. and Hirayama, H.:
    "Ag-metal bonding condition for low-loss double-metal waveguide of terahertz quantum cascade laser"
    Jap. J. Appl. Phys., Vol. 47, No. 10, 7926-7928 (2008).

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