Advanced Device Laboratory
We are exploring functional nanoelectronics that is complementary to the Silicon electronics. The single electron devices, quantum computing devices, spintronics devices and Teraherz(THz) devices are the subjects of our interests, where an electron spin, a nuclear spin and an exciton et al. may be controlled in a single particle level. To realize these devices in nanoscale dimensions, we not only use conventional semiconductor materials, but also use carbon nanotubes and semiconductor nanowires that have extremely small dimensions which is difficult to fabricate with conventional lithography technique. New physics or new functionalities that appear in the nanoscale devices are also our interests.
- Development of novel fabriation and characterization techniques for molecular scale nanostructures
- Fabrication of functional nanodevices and demonstration of their operation
- Exploring new functionalities in nanostructures and studying their physics
- December 8, 2010
- Technique developed for nano-scale imaging of electric potential and noise distributions on material surface
- November 10, 2009
- Ultra-high sensitive terahertz wave sensor with photon-level resolution developed
- August 11, 2008
- Successful ultra-high resolution imaging with terahertz electromagnetic waves
- January 15, 2010
- Sensitive hybrid
Combining design concepts produces a high-sensitivity detector that could enable greater exploitation of terahertz radiation![]()
- November 14, 2008
- An all-in-one chip
A new near-field design for terahertz radiation detection promises high-resolution imaging devices on a chip![]()
- December 21, 2007
- The creation of nanodevices
![]()
- Sung-Kwon Shin, Shaoyun Huang, Naoki Fukata, and Koji Ishibashi.:
"Top-gated Germanium nanowire quantum dots in a few electron regime"
Appl. Phys. Lett. 100, 073103 (4 pages) (2012) - T. Nishio, T. Kozakai, S. Amaha, M. Larsson, H. Nilsson, H. Q. Xu, G. Q. Zhang, K. Tateno, H. Takayanagi and K. Ishibashi.:
"Supercurrent through InAs nanowires with highly transparent superconducting contacts"
Nanotechnology, 22, 445701 (5pages) (2011) - S. Moriyama, D. Tsuya, E. Watanabe, S. Uji, M. Shimizu, T. Mori, T. Yamaguchi, and K. Ishibashi.:
"Coupled quantum dots in a graphene-based two-dimensional semimetal"
Nano Lett. 9, 2891-2896 (2009) - Yukio Kawano and Koji Ishibashi.:
"An on-chip near-field terahertz probe and detector"
Nature Photonics, 2, 618-621 (2008) - SY. Huang, N. Fukata, M. Shimizu, T. Yamaguchi, T. Sekiguchi, and K. Ishibashi.:
"Classical Coulomb blockade of a silicon nanowire dot"
Appl. Phys. Lett., 92, 213110 (2008) - Y. Kawano, T. Fuse, S. Toyokawa, T. Uchida, K. Ishibashi.:
"Terahertz photon-assisted tunneling in carbon nanotube quantum dots"
J. Appl. Phys. 103, 034307 (2008) - K. Ishibashi, S. Moriyama, D. Tsuya, T. Fuse, M. Suzuki.:
"Quantum-Dot Nanodevices with Carbon Nanotubes"
J. Vac. Sci. Technol. A24 (4), 1349-1355 (2006) - S. Moriyama, T. Fuse, M. Suzuki, Y. Aoyagi, and K. Ishibashi.:
"Four-electron shell structures and an interacting two-electron system in carbon nanotube quantum dots"
Physical Review Letters. 94, 186806 (2005) - K. Ishibashi, D. Tsuya, M. Suzuki, and Y. Aoyagi.:
"Fabrication of single electron inverter in multiwall carbon nanotubes"
Applied Physics Letters, 82, 3307 (2003). - K. Ishibashi, M. Suzuki, T. Ida and Y. Aoyagi.:
"Formation of coupled quantum dots in single-wall carbon nanotubes"
Applied Physics Letters, 79, 1864 (2001).
Principal Investigator
- Koji ISHIBASHI
- Chief Scientist
Staff Scientist
- Shu WATANABE
- Senior Research Scientist
- Tomohiro YAMAGUCHI
- Senior Research Scientist
- Masashi NANTOH
- Senior Research Scientist
- Takayuki OKAMOTO
- Senior Research Scientist
- Akira HIDA
- Research Scientist
- Russell Stewart DEACON
- Research Scientist
Postdoctoral Fellow
- Tomoko FUSE
- Special Postdoctoral Researcher
- Zhihai WANG
- Foreign Postdoctoral Researcher
Technical Assistant
- Masaru MIHARA
- Technical Staff I

