Laboratories
Home > Laboratories > Advanced Science Institute > Advanced Device Laboratory
Advanced Device Laboratory
Koji ISHIBASHi
Chief Scientist
Koji ISHIBASHi (D.Eng.)
mail

Click

Research Areas

We are exploring functional nanoelectronics that is complementary to the Silicon electronics. The single electron devices, quantum computing devices, spintronics devices and Teraherz(THz) devices are the subjects of our interests, where an electron spin, a nuclear spin and an exciton et al. may be controlled in a single particle level. To realize these devices in nanoscale dimensions, we not only use conventional semiconductor materials, but also use carbon nanotubes and semiconductor nanowires that have extremely small dimensions which is difficult to fabricate with conventional lithography technique. New physics or new functionalities that appear in the nanoscale devices are also our interests.

Research Subject

  1. Development of novel fabriation and characterization techniques for molecular scale nanostructures
  2. Fabrication of functional nanodevices and demonstration of their operation
  3. Exploring new functionalities in nanostructures and studying their physics

Related links

  1. RIKEN Advanced Science Institute Website_Laboratories PageNew Window
  2. Individual Website Laboratory PageNew Window

Press release

November 10, 2009
Ultra-high sensitive terahertz wave sensor with photon-level resolution developed
August 11, 2008
Successful ultra-high resolution imaging with terahertz electromagnetic waves
July 06, 2006
Detecting the first tera hertz photon by "Carbon nano-tube artificial atom": new step toward a single photon detector of "tera hertz wave" New Window

RIKEN RESEARCH

January 15, 2010
Sensitive hybrid
Combining design concepts produces a high-sensitivity detector that could enable greater exploitation of terahertz radiation New Window
November 10, 2009
Ultra-high sensitive terahertz wave sensor with photon-level resolution developed
November 14, 2008
An all-in-one chip
A new near-field design for terahertz radiation detection promises high-resolution imaging devices on a chip New Window
December 21, 2007
The creation of nanodevices New Window

List of Selected Publications

  1. S. Y. Huang, S. K. Shin, N. Fukata and K. Ishibashi
    "A single-electron transistor and an even-odd effect in chemically synthesied Ge nanowires"
    J. Appl. Phys. 109, 036101 (2011)
  2. S. Moriyama, D. Tsuya, E. Watanabe, S. Uji, M. Shimizu, T. Mori, T. Yamaguchi, and K. Ishibashi
    "Coupled quantum dots in a graphene-based two-dimensional semimetal"
    Nano Lett. 9, 2891-2896 (2009)
  3. Yukio Kawano, Takao Uchida, and Koji Ishibashi
    "Terahertz sensing with a carbon nanotube/two-dimensional electron gas hybrid transistor"
    Appl. Phys. Lett. 95, 083123 (2009)
  4. Yukio Kawano and Koji Ishibashi
    "An on-chip near-field terahertz probe and detector"
    Nature Photonics, 2, 618-621 (2008)
  5. SY. Huang, N. Fukata, M. Shimizu, T. Yamaguchi, T. Sekiguchi, and K. Ishibashi
    "Classical Coulomb blockade of a silicon nanowire dot"
    Appl. Phys. Lett., 92, 213110 (2008)
  6. Y. Kawano, T. Fuse, S. Toyokawa, T. Uchida, K. Ishibashi
    "Terahertz photon-assisted tunneling in carbon nanotube quantum dots"
    J. Appl. Phys. 103, 034307 (2008)
  7. K. Ishibashi, S. Moriyama, D. Tsuya, T. Fuse, M. Suzuki
    "Quantum-Dot Nanodevices with Carbon Nanotubes"
    J. Vac. Sci. Technol. A24 (4), 1349-1355 (2006)
  8. S. Moriyama, T. Fuse, M. Suzuki, Y. Aoyagi, and K. Ishibashi:
    "Four-electron shell structures and an interacting two-electron system in carbon nanotube quantum dots"
    Physical Review Letters. 94, 186806 (2005)
  9. K. Ishibashi, D. Tsuya, M. Suzuki, and Y. Aoyagi:
    "Fabrication of single electron inverter in multiwall carbon nanotubes"
    Applied Physics Letters, 82, 3307 (2003).
  10. K. Ishibashi, M. Suzuki, T. Ida and Y. Aoyagi:
    "Formation of coupled quantum dots in single-wall carbon nanotubes"
    Applied Physics Letters, 79, 1864 (2001).