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Terahertz Quantum Device Team
Hideki HIRAYAMA
Team Leader
Hideki HIRAYAMA (D.Eng.)
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Research Areas

We develop advanced terahertz emitting and sensing devices based on inter sub-band optical transition of semiconductor quantum cascade structures. Firstly, we design and fabricate novel quantum cascade superlattice (SL) structures for high-efficiency terahertz transitions and develop terahertz quantum cascade laser (QCLs) with frequency range between 1-10 THz. We also develop high-sensitivity terahertz-wave detectors and terahertz-infrared (IR) light modulators using inter sub-band absorption of quantum wells. We hope through this research to construct what will become the base of the next-generation advanced terahertz imaging system.

Research Subject

  1. Research toward the realization of higher temperature operation of QCL
  2. Research toward the realization of 5-12 THz-band QCL using nitride semiconductors

Related links

  1. RIKEN Advanced Science Institute Website_Laboratories PageNew Window

RIKEN RESEARCH

January 20, 2012
Developing the world's highest output in deep-UV light-emitting diode technologyNew Window

List of Selected Publications

  1. Lin, T.T., Ying, L., and Hirayama, H.:
    "Threshold current density reduction by utilizing high-Al-composition barriers in 3.7 THz GaAs/AlGaAs quantum cascade lasers"
    Appl. Phys. Express, Vol. 5, 012101 (2011).
  2. Terashima, W. and Hirayama, H.:
    "Development of terahertz quantum cascade laser based on III-nitride semiconductors"
    The Review of Laser Engineering, Vol. 39, No. 10, pp. 769-774 (2011).
  3. Terashima, W. and Hirayama, H.:
    "Molecular beam epitaxy growth of GaN/AlGaN quantum cascade structure using droplets elimination by thermal annealing technique"
    Phys. Status Solidi A 208, No. 5, pp. 1187-1190 (2011).
  4. Terashima, W. and Hirayama, H.:
    "Spontaneous emission from GaN/AlGaN terahertz quantum cascade laser grown on GaN substrate"
    Phys. Status Solidi C, Vol. 8, pp. 2302-2304 (2011).
  5. Mino, T., Hirayama, H., Takano, T., Tsubaki, K. and Sugiyama, M.:
    "Characteristics of epitaxial lateral overgrowth AlN template on (111)Si substrates for AlGaN deep-UV LEDs fabricated on different direction stripe patterns"
    Phys. Status Solidi, in press.
  6. Fujikawa, S., Hirayama, H. and Maeda, N.:
    "High-Efficiency AlGaN Deep-UV LEDs fabricated on a- and m-axis oriented c-plane sapphire substrates"
    Phys. Status Solidi, in press.
  7. Mino, T., Hirayama, H., Takano, T., Tsubaki, K. and Sugiyama, M.:
    "Realization of 256-278 nm AlGaN-based Deep-Ultraviolet Light-Emitting Diodes on Si Substrates Using Epitaxial Lateral Overgrowth AlN Templates"
    Applied Physics Express 4, 092104 (2011).
  8. Fujikawa, S. and Hirayama, H.:
    "284-300 nm quaternary InAlGaN-based deep-ultraviolet light-emitting diodes on Si(111) substrates"
    Applied Physics Express 4, 061002 (2011).
  9. Terashima, W. and Hirayama, H.:
    "The Utility of Droplet Elimination by Thermal Annealing Technique for Fabrication of GaN/AlGaN Terahertz Quantum Cascade Structure by Radio Frequency Molecular Beam Epitaxy"
    Appl. Phys. Express, Vol. 3, No. 12, 125501-1-3 (2010).
  10. Ying, L., Horiuchi, N. and Hirayama, H.:
    "Ag-metal bonding condition for low-loss double-metal waveguide of terahertz quantum cascade laser"
    Jap. J. Appl. Phys., Vol. 47, No. 10, 7926-7928 (2008).

Members

Principal Investigator

Hideki HIRAYAMA
Team Leader

Staff Scientist

Wataru TERASHIMA
ASI Research Scientist

Postdoctoral Fellow

Sachie FUJIKAWA
Postdoctoral Researcher
Tsung-Tse LIN
Postdoctoral Researcher

Technical Assistant

Noritoshi MAEDA
Technical Staff I
Mariko KAWAMURA
Technical Staff I
Tomokazu YOSHIDA
Technical Staff I
Miho SASAKI
Technical Staff I
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