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Terahertz Quantum Device Team
Hideki HIRAYAMA
Team Leader
Hideki HIRAYAMA (D.Eng.)
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Research Areas

We develop advanced terahertz emitting and sensing devices based on inter sub-band optical transition of semiconductor quantum cascade structures. Firstly, we design and fabricate novel quantum cascade superlattice (SL) structures for high-efficiency terahertz transitions and develop terahertz quantum cascade laser (QCLs) with frequency range between 1-10 THz. We also develop high-sensitivity terahertz-wave detectors and terahertz-infrared (IR) light modulators using inter sub-band absorption of quantum wells. We hope through this research to construct what will become the base of the next-generation advanced terahertz imaging system.

Research Subject

  1. Research toward the realization of higher temperature operation of QCL
  2. Research toward the realization of 5-12 THz-band QCL using nitride semiconductors

Related links

  1. RIKEN Advanced Science Institute Website_Laboratories PageNew Window

RIKEN RESEARCH

January 20, 2012
Developing the world's highest output in deep-UV light-emitting diode technologyNew Window

List of Selected Publications

  1. Terashima, W. and Hirayama, H.
    "The Utility of Droplet Elimination by Thermal Annealing Technique for Fabrication of GaN/AlGaN Terahertz Quantum Cascade Structure by Radio Frequency Molecular Beam Epitaxy"
    Appl. Phys. Express, Vol. 3, No. 12, 125501-1-3 (2010).
  2. Terashima, W. and Hirayama, H.
    "Molecular beam epitaxy growth of GaN/AlGaN quantum cascade structure using droplets elimination by thermal annealing technique"
    Physica Status Solidi A, 1-4 (2011).
  3. Terashima, W. and Hirayama, H.
    "Spontaneous emission from GaN/AlGaN terahertz quantum cascade laser grown on GaN substrate"
    in press
  4. Ying, L., Horiuchi, N. and Hirayama, H.
    "Ag-metal bonding condition for low-loss double-metal waveguide of terahertz quantum cascade laser"
    Jap. J. Appl. Phys., Vol. 47, No. 10, 7926-7928 (2008).
  5. Hirayama, H. Tsukada, Y. Maeda, N. and Kamata, N.
    "Marked Enhancement in the Efficiency of Deep-Ultraviolet AlGaN Light-Emitting Diodes by Using a Multiquantum-Barrier Electron Blocking Layer"
    Appl. Phys. Express, 3, 031002-1-3 (2010).
  6. Hirayama, H. Noguchi, N. and Kamata, N.
    "222 nm Deep-Ultraviolet AlGaN Quantum Well Light-Emitting Diode with Vertical Emission Properties"
    Appl. Phys. Express, 3, 032102-1-3 (2010).
  7. Hirayama, H.
    "Recent Progress of 220-280 nm-band AlGaN-based deep-UV LEDs"
    SPIE 7617-52 (2010). (Invited Paper).
  8. Hirayama, H. Noguchi, N. Fujikawa, S. Norimatsu, J. Takano, T. Tsubaki, K. and Kamata, N.
    "222-282nm AlGaN and InAlGaN based high-efficiency deep-UV-LEDs fabricated on high-quality AlN on sapphire"
    Physica Status Solidi (a), 206, pp. 1176-1182 (2009).
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