Strong Correlation Interface Research Group

Artificial interfaces and superlattices are designed and constructed with the aid of cutting-edge thin film technology of transition-metal oxides having various ordered structures in charge, spin and orbital degrees of freedom of electrons. The responses of these superstructures to such stimuli as magnetic field, electrical field and photo irradiation are examined to elucidate cross-correlated functionalities. These studies will enable us to create new kinds of devices such as switches, memories, photovoltaics and sensors based on a novel concept of Mottronics.

Research Fields

Physics / Engineering / Chemistry / Materials Sciences

Research Subjects

• Oxide heterostructures
• Mott transition at interfaces
• Interfacial devices

Publications

1. Kawasaki, M. and Iwasa, Y.:
   "Cut and atick ion gels"
   Nature 489, 510 (2012)
2. Nakano, M. et al.:
   "Collective bulk carrier delocalozation driven by electrostatic charge acciilation"
   Nature 487 459 (2012)
3. Hwang, H. Y. et al.:
   "Emergent phenomena at oxide interfaces"
   Nature Materials 11, 103 (2012)
4. Sheng, Z. G. et al.:
   "Dynamics of multiple phases in a colossal-magnetoresistive manganite as revealed by dielectric spectroscopy"
   Nature Communications 9, 944 (2012)
5. Wadati H. et al.;
   "Origin of the Large Polarization in Multiferroic YMnO3 Thin Films Revealed by Soft- and Hard-X-Ray Diffraction"
   Physical Review Letters 108, 047203 (2012)
6. Maryenko, D. et al.:
   "Temperature dependent magnetotransport around ν = 1/2 in ZnO heterostructures"
   Physical Review Letters 108, 186803 (2012)
7. Liu F. et al.:
   "Ultrafast Time-Resolved Faraday Rotation in EuO Thin Films"
   Physical Review Letters 108, 257401 (2012)
8. Lai, K. et al:
   "Mesoscopic Percolating Resistance Network in a Strained Manganite Thin Film"
   Science 329, 190 (2010)
9. Nakamura, M. et al.:
   "Magnetically Tunable Metal-Insulator Superlattices"
   Advanced Matwerials 22, 500 (2010)
10. Tahakashi K. S. et al.:
    "Control of the Anomalous Hall Effect by Doping in Eu_1-xLa_xTiO₃ Thin Films"
    Physical Review Letters 103, 057204 (2011)